TY  - CHAP
AU  - Martil De La Plaza, Ignacio
AU  - García Hemme, Eric
AU  - García Hernansanz, Rodrigo
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
AU  - Prado Millán, Álvaro Del
PY  - 2012
DO  - 10.1063/1.4766488
UR  - https://hdl.handle.net/20.500.14352/45520
AB  - Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements show Ti...
LA  - eng
M2  - 54
PB  - American Institute of Physics
KW  - Silicon
KW  - Alloys.
TI  - Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material
TY  - book part
VL  - 1496
ER  -