TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2001
DO  - 10.1023/A:1011219622378
SN  - 0957-4522
UR  - https://hdl.handle.net/20.500.14352/59115
T2  - Journal of Materials Science: Materials in Electronics
AB  - Electrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained at a...
LA  - eng
M2  - 263
PB  - Kluwer Academic Publ.
KW  - Insulator-Semiconductor Structures
KW  - Al/SiNx:H/InP
KW  - Devices
KW  - Nitridation.
TI  - C-V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N-2 remote plasma cleaning of the InP surface
TY  - journal article
VL  - 12
ER  -