%0 Journal Article
%A Zaldivar, M.H.
%A Fernández Sánchez, Paloma
%A Piqueras De Noriega, Francisco Javier
%T Luminescence from growth topographic features in GaN : Si films
%D 1998
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59162
%X Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes.
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