RT Journal Article
T1 Luminescence from growth topographic features in GaN : Si films
A1 Zaldivar, M.H.
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
AB Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes.
PB American Institute of Physics
SN 0021-8979
YR 1998
FD 1998-01-01
LK https://hdl.handle.net/20.500.14352/59162
UL https://hdl.handle.net/20.500.14352/59162
LA eng
NO © © 1998. All rights reserved.This wirk was supported by DGICYT (Proyect No. PB-1256). M.H.Z. thanks AECI for a research grand.
NO DGICYT
NO AECI
DS Docta Complutense
RD 10 abr 2025