%0 Journal Article
%A Domínguez-Adame Acosta, Francisco
%A Piqueras de Noriega, Javier
%A De Diego, N.
%A LLopis, J.
%T Spatial distribution of vacancy defects in GaP wafers
%D 1988
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59309
%X Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.
%~