RT Journal Article
T1 Spatial distribution of vacancy defects in GaP wafers
A1 Domínguez-Adame Acosta, Francisco
A1 Piqueras De Noriega, Francisco Javier
A1 De Diego, N.
A1 LLopis, J.
AB Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.
PB American Institute of Physics
SN 0021-8979
YR 1988
FD 1988-04-15
LK https://hdl.handle.net/20.500.14352/59309
UL https://hdl.handle.net/20.500.14352/59309
LA eng
NO © American Institute of Physics.The authors thank Wacker-Chemitronic (DR. K. Löhnert) for providing the samples. The help of P. Fernández is acknowledged
DS Docta Complutense
RD 6 abr 2025