TY  - JOUR
AU  - Domínguez-Adame Acosta, Francisco
AU  - Piqueras De Noriega, Francisco Javier
AU  - De Diego, N.
AU  - LLopis, J.
PY  - 1988
DO  - 10.1063/1.340994
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59309
T2  - Journal of Applied Physics
AB  - Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects...
LA  - eng
M2  - 2583
PB  - American Institute of Physics
KW  - Physics
KW  - Applied
TI  - Spatial distribution of vacancy defects in GaP wafers
TY  - journal article
VL  - 63
ER  -