RT Journal Article
T1 Sawtooth superlattices in a 2-band semiconductor
A1 Domínguez-Adame Acosta, Francisco
A1 Méndez Martín, María Bianchi
AB We consider electron dynamics in two-band semiconductor superlattices within the envelope function approximation. We develop a numerical method, based on the properties of the periodic continued fractions, to find the dispersion relation inside allowed minibands and to obtain the envelope functions. As an application, we concentrate on GaAs sawtooth-doped superlattices, consisting of periodic alternating n- and p-type delta-doped sheets separated by undoped material. Results are compared with one-band semiconductor predictions, and we find that coupling of bands in the host semiconductor indeed gives rise to relevant effects, especially for higher-minibands.
PB IOP Publishing LTD
SN 0268-1242
YR 1994
FD 1994-07
LK https://hdl.handle.net/20.500.14352/58966
UL https://hdl.handle.net/20.500.14352/58966
LA eng
NO © 1994 IOP Publishing Ltd.The authors would like to thank E Macia and A Sfinchez for a critical reading of the manuscript. This work is partially supported by UCM under Project PR161/93-4811.
NO UCM
DS Docta Complutense
RD 29 jul 2026