TY  - JOUR
AU  - Shen, Xiao
AU  - Pennycook, Timothy J.
AU  - Hernández Martín, David
AU  - Pérez, Ana
AU  - Varela Del Arco, María
AU  - Puzyrev, Yevgeniy S.
AU  - León Yebra, Carlos
AU  - Sefrioui, Zouhair
PY  - 2016
DO  - 10.1002/admi.201600086
SN  - 2196-7350
UR  - https://hdl.handle.net/20.500.14352/18987
T2  - Advanced materials interfaces
AB  - Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control....
LA  - eng
PB  - Wiley-Blackwell
KW  - Electric-field control
KW  - Tunnel-junctions
KW  - Oxide
KW  - Magnetization
KW  - Mechanism
KW  - Systems
KW  - Memory
KW  - Films.
TI  - High On/Off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity
TY  - journal article
VL  - 3
ER  -