RT Journal Article T1 Recombination processes in Te-doped ZnO microstructures A1 Iribarren, A. A1 Fernández Sánchez, Paloma A1 Piqueras De Noriega, Francisco Javier AB Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep-level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band-to-band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. [GRAPHICS] SEM image and cathodoluminescence emission of needle- and pencil-like TeO2-doped ZnO microstructures. PB Wiley-V C H Verlag Gmbh SN 0370-1972 YR 2014 FD 2014-03 LK https://hdl.handle.net/20.500.14352/33549 UL https://hdl.handle.net/20.500.14352/33549 NO (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.This research was partially supported by MCINN (Projects MAT2009-07882, MAT2012-31959 and CSD2009-00013). NO MCINN DS Docta Complutense RD 8 abr 2025