TY  - JOUR
AU  - Domínguez-Adame Acosta, Francisco
AU  - Méndez Martín, Bianchi
AU  - Piqueras de Noriega, Javier
AU  - De Diego, N.
AU  - LLopis, J.
AU  - Moser, P.
PY  - 1989
DO  - 10.1051/jphyscol:1989633
SN  - 0035-1687
UR  - https://hdl.handle.net/20.500.14352/58999
T2  - Revue de Physique Appliquee
AB  - Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have been...
M2  - 179
PB  - Editions Physique
KW  - Physics
KW  - Multidisciplinary
TI  - Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers
TY  - journal article
VL  - 24
ER  -