RT Journal Article
T1 Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
AB Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the nature and spatial distribution of defects and impurities in n-type epitaxial 4H-SiC. CL microscopy reveals the existence of 6H-SiC polytype inclusions, while CL spectra recorded at different excitation conditions show luminescence emission related to deep levels in the SiC epilayer. Deconvolution of the mentioned spectra indicates the complex character of the deep-level CL emission, that is actually composed of four bands centred near 2.72, 2.56, 2.42 and 2.00 eV at 88 K. The origin of these bands is discussed considering previous deep level transient spectroscopy measurements carried out in the same material investigated in the present work.
PB E D P Sciences
SN 1286-0042
YR 2004
FD 2004-07
LK https://hdl.handle.net/20.500.14352/51145
UL https://hdl.handle.net/20.500.14352/51145
NO © E D P Sciences.International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (10. 2003. Batz sur Mer, Francia).
DS Docta Complutense
RD 2 oct 2024