TY  - JOUR
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras de Noriega, Javier
PY  - 2004
DO  - 10.1051/ep.jap:2004091
SN  - 1286-0042
UR  - https://hdl.handle.net/20.500.14352/51145
T2  - European Physical Journal-Applied Physics
AB  - Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the nature and spatial distribution of defects and impurities in n-type epitaxial 4H-SiC. CL microscopy reveals the existence of 6H-SiC polytype inclusions, while CL...
M2  - 227
PB  - E D P Sciences
KW  - Silicon-Carbide
KW  - Epitaxial-Growth
KW  - Schottky Diodes
KW  - Defects
KW  - Crystals
KW  - Centers
TI  - Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers
TY  - journal article
VL  - 27
ER  -