%0 Journal Article
%A Díaz-Guerra Viejo, Carlos
%A Piqueras de Noriega, Javier
%A Castaldini, A.
%A Cavallini, A.
%A Polent, L.
%T Defect assessment of Mg-doped GaN by beam injection techniques
%D 2003
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/51150
%X The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous recombination activity in the investigated material. Deep levels giving rise to level-to-band transitions were detected by PC spectroscopy. A large PC quenching observed upon illumination with light of (2.65-2.85) eV is tentatively attributed to metastable traps within the band gap. CL spectra reveal the existence of emission bands centered at 85 K at 3.29, 3.20, 3.15, and 3.01 eV, respectively. Both time-resolved and steady-state CL measurements carried out under different excitation conditions indicate that the 3.15 and 3.01 eV emissions are likely related to donor-acceptor pair transitions. TRCL measurements also reveal different recombination kinetics for these bands and suggest that deep donors are involved in the mechanism responsible for the 3.01 eV emission.
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