RT Journal Article
T1 Defect assessment of Mg-doped GaN by beam injection techniques
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
A1 Castaldini, A.
A1 Cavallini, A.
A1 Polent, L.
AB The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous recombination activity in the investigated material. Deep levels giving rise to level-to-band transitions were detected by PC spectroscopy. A large PC quenching observed upon illumination with light of (2.65-2.85) eV is tentatively attributed to metastable traps within the band gap. CL spectra reveal the existence of emission bands centered at 85 K at 3.29, 3.20, 3.15, and 3.01 eV, respectively. Both time-resolved and steady-state CL measurements carried out under different excitation conditions indicate that the 3.15 and 3.01 eV emissions are likely related to donor-acceptor pair transitions. TRCL measurements also reveal different recombination kinetics for these bands and suggest that deep donors are involved in the mechanism responsible for the 3.01 eV emission.
PB American Institute of Physics
SN 0021-8979
YR 2003
FD 2003-12-15
LK https://hdl.handle.net/20.500.14352/51150
UL https://hdl.handle.net/20.500.14352/51150
LA eng
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NO © 2003 American Institute of Physics.The authors wish to thank D. C. Look, H. Morkoc¸, and J. van Nostrand for providing the investigated material. This work has been partially supported by MCYT through Project No. MAT2000-2119.
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