RT Journal Article
T1 Electronic states in graded-gap junctions with band inversion
A1 Domínguez-Adame Acosta, Francisco
AB We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the k . p approximation and assuming that the gap and the gap centre present linear profiles, we demonstrate the existence of a set of localized states along the growth direction with a discrete energy spectrum. The envelope functions are found to be a combination of harmonic oscillator eigenfunctions, and the corresponding energy levels are proportional to the square root of the quantum number. The level spacing can be directly controlled by varying the structure thickness.
PB Elsevier
SN 0375-9601
YR 1995
FD 1995-06-03
LK https://hdl.handle.net/20.500.14352/59375
UL https://hdl.handle.net/20.500.14352/59375
LA eng
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NO © Elsevier. The author thanks A. Sánchez for a critical reading of the manuscript. This work is supported by DGICYT (Spain) under project MAT95-0325.
NO DGICYT (Spain)
DS Docta Complutense
RD 18 jul 2024