RT Journal Article
T1 Unveiling the different physical origins of magnetic anisotropy and magnetoelasticity in ga-rich fega thin films
A1 Bartolomé, Pablo
A1 Begué, A
A1 Muñoz Noval, Álvaro
A1 Ciria, M.
A1 Ranchal Sánchez, Rocío
AB The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28 composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic anisotropy could be expected, in-plane anisotropy is only present when the sample thickness is above 100 nm. By means of differential X-ray absorption spectroscopy, we have determined the influence of both Ga pairs and tetragonal cell distortion on the evolution of the magnetic anisotropy with the increase of FeGa thickness. On the other hand, we have used the cantilever beam technique with capacitive detection to also determine the evolution of the magnetoelastic parameters with the thickness increase. In this case, experimental results can be understood considering the grain distribution. Therefore, the different physical origins for anisotropy and magnetoelasticity open up the possibility to independently tune these two characteristics in Ga-rich FeGa films.
PB American Chemical Society
SN 1932-7447
YR 2020
FD 2020-02-27
LK https://hdl.handle.net/20.500.14352/6105
UL https://hdl.handle.net/20.500.14352/6105
LA eng
NO ©2020 American Chemical SocietyWe thank ALBA synchrotron for providing time and technical assistance at the BL22 beamline, and Instituto of Sistemas OptoelectrOnicos y Microtecnologia (ISOM) for using some of its facilities. This work has been financially supported through the projects MAT2015-66888-C3-3-R and MAT2015-66726-R (MINECO/FEDER) of the Spanish Ministry of Economy and Competitiveness, RTI2018-097895-B-C43 of the Spanish Ministry of Science, Innovation, and Universities, and Gobierno de Aragon (Grant E10 -17D) and Fondo Social Europeo. A.M.-N. is thankful for the contract from Universidad Complutense and Comunidad de Madrid "Atraccion de Talento" program 2018-T1/IND-10360, and A.B. thanks MINECO for the Ph.D. grant BES-2016-076482.
NO Ministerio de Economía y Competitividad (MINECO) / FEDER
NO Ministerio de Ciencia e Innovación (MICINN)
NO Ministerio de Economía y Competitividad (MINECO)
NO Gobierno de Aragón
NO Comunidad de Madrid / Universidad Complutense de Madrid
DS Docta Complutense
RD 5 abr 2025