RT Journal Article
T1 Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
AB Silicon oxynitride films were deposited at room temperature using the ECR-PECVD technique. Precursor gases were O(2), N(2) and SiH(4). The composition of the films can be controlled by regulating the gases flow ratio. R = (O(2) + N(2))/SiH(4) and R' = O(2)/SiH(4) have proved to be the key deposition parameters. FTIR spectroscopy, AES and ellipsometric measurements were performed in order to characterise the films. A single Si-O/Si-N stretching band is observed in the FTIR spectrum for all compositions, indicating single-phase homogeneous SiO(x)N(y) films. FWHM of the stretching band shows a maximum for the composition corresponding to the same number of Si-O and Si-N bonds. Samples cover the whole composition range from silicon nitride to silicon oxide including nitrogen-rich films, even though the gas flow ratio R " = N(2)/O(2) during deposition was small (from R " = 1.0 for SiO(1.9)N(0.04) to R " I = 6.7 for SiO(0.26)N(1.2)). Silicon oxide composition samples (SiO(2.0)) show essentially the same TR features as the thermal oxide: Si-O stretching band located at 1072 cm(-1), with a FWHM of 96 cm(-1) and a shoulder/peak ratio of 0.30, while nitrogen-rich samples (SiO(0.26)N(1.2)) show a total bonded hydrogen content below 2 x 10(22) cm(-3).
PB Elsevier Science SA
SN 0040-6090
YR 1999
FD 1999-04
LK https://hdl.handle.net/20.500.14352/59283
UL https://hdl.handle.net/20.500.14352/59283
LA eng
NO International Vacuum Congress (14. 1999. Birmingham, Inglaterra) / International Conference on Solid Surfaces (10. 1999. Birmingham, Inglaterra) / International Conference on Nanometre-Scale Science and Technology (5. 1999. Birmingham, Inglaterra) / International Conference on Quantitative Surface Analysis (10. 1999. Birmingham, Inglaterra). © Elsevier Science SA.
DS Docta Complutense
RD 16 abr 2025