TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
PY  - 1999
DO  - 10.1016/S0040-6090(98)01701-5
SN  - 0040-6090
UR  - https://hdl.handle.net/20.500.14352/59283
T2  - Thin Solid Films
AB  - Silicon oxynitride films were deposited at room temperature using the ECR-PECVD technique. Precursor gases were O(2), N(2) and SiH(4). The composition of the films can be controlled by regulating the gases flow ratio. R = (O(2) + N(2))/SiH(4) and R' =...
LA  - eng
M2  - 437
PB  - Elsevier Science SA
KW  - Chemical-Vapor-Deposition
KW  - Resonance Plasma Method.
TI  - Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature
TY  - journal article
VL  - 343
ER  -