RT Book, Section
T1 Site multiplicity of rare earth ions in III-nitrides
A1 O'Donnell, KP
A1 Katchkanova, V.
A1 Wang, K.
A1 Martin, R.W.
A1 Edwards, P.R.
A1 Hourahine, B.
A1 Nogales Díaz, Emilio
A1 Mosselmans, J.F.W.
A1 De Vries, B.
AB This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.
PB Materials Research Society
SN 1-55899-779-2
YR 2005
FD 2005
LK https://hdl.handle.net/20.500.14352/53572
UL https://hdl.handle.net/20.500.14352/53572
LA eng
NO © Materials Research Society.ESSN: 1946-4274Symposium on GaN, AIN, InN and Their Alloys. (2004. Boston) We are grateful to the European Union for supporting this work unde  Contract HRPN-CT-2001-00297
NO European Union
DS Docta Complutense
RD 13 abr 2025