TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2002
DO  - 10.1002/sia.1403
SN  - 0142-2421
UR  - https://hdl.handle.net/20.500.14352/59102
T2  - Surface and interface analysis
AB  - Films of SiOxNy:H were deposited at room temperature on Si substrates by the electron cyclotron resonance (ECR) plasma method. By varying the flow rates of the precursor gases SiH4, O-2. and N-2, the whole composition range between pure silicon oxide...
M2  - 749
PB  - John Wiley & Sons Ltd.
KW  - Chemical-Vapor-Deposition
KW  - Silicon Oxynitride.
TI  - Compositional analysis of SiOxNy : H films by heavy-ion ERDA: the problem of radiation damage
TY  - journal article
VL  - 34
ER  -