RT Journal Article
T1 A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
AB In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication.
PB Kluwer Academic Publ.
SN 0957-4522
YR 2003
FD 2003-05
LK https://hdl.handle.net/20.500.14352/51140
UL https://hdl.handle.net/20.500.14352/51140
LA eng
NO International Conference on Materials for Microelectronics and Nanoengineering (4. 2002. Espoo, Finlandia). © 2003 Kluwer Academic Publishers.
DS Docta Complutense
RD 7 jun 2025