RT Journal Article
T1 Cathodoluminescence microscopy of doped GaSb crystals
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Dutta, Partha
A1 Dieguez, Ernesto
AB We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and doped (chromium) material. CL investigations have revealed a non uniform distribution of native defects in GaSb wafers. Post growth annealing in vacuum, gallium or antimony atmospheres causes an increase in homogeneity in CL images. Te diffusion and Cr doping provides new information about defects in GaSb. CL images and CL spectra recorded in these samples support that the type of defects formed is a function of diffusion time and impurity concentration.
PB Elsevier Science Sa
SN 0921-5107
YR 1996
FD 1996
LK https://hdl.handle.net/20.500.14352/58961
UL https://hdl.handle.net/20.500.14352/58961
LA eng
NO © 1996 - Elsevier Science S.A. International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) (4.1996. El Escorial, Madrid).
DS Docta Complutense
RD 11 abr 2025