TY  - JOUR
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Dutta, Partha
AU  - Dieguez, Ernesto
PY  - 1996
DO  - 10.1016/S0921-5107(96)01680-7
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/58961
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and doped...
LA  - eng
M2  - 38
PB  - Elsevier Science Sa
KW  - Gallium Antimonide
KW  - Phase Epitaxy
KW  - P-Type
KW  - Photoluminescence
KW  - Defects
TI  - Cathodoluminescence microscopy of doped GaSb crystals
TY  - journal article
VL  - 42
ER  -