RT Journal Article
T1 Mixed effects of the atomic arrangement and surface chemistry on the electrodeposition of Bi thin films on n-GaAs substrates
A1 Prados Díaz, Alicia
A1 Pérez García, Lucas
A1 Guzmán, Alvaro
A1 Ranchal Sánchez, Rocío
AB We have studied the electrodeposition of Bi thin films on two GaAs orientations with different atomic arrangement and chemical composition, (110) and (111)B. The electrochemical properties of each substrate have been analyzed by means of cyclic voltammetries and current transients. Then, X-ray diffraction has been used to determine the crystal structure and quality of the Bi films, and atomic force microscopy images have provided information about the surface morphology. Finally, the Bi/GaAs interface has been electrically characterized by means of capacitance-voltage and current-voltage curves. In this study, we have been able to discriminate between the effect of surface chemistry and the arrangement of surface atoms. The former has a direct effect on the reduction process of Bi(III) ions and on the electrical properties of the Bi/GaAs interface, whereas the atoms arrangement at the substrate surface determines the texture and morphology of the Bi films.
PB Amer Chemical Soc
SN 1932-7447
YR 2016
FD 2016-12-15
LK https://hdl.handle.net/20.500.14352/18266
UL https://hdl.handle.net/20.500.14352/18266
LA eng
NO © Amer Chemical Soc.We acknowledge partial financial support of this work by Spanish Ministry of Economy and Competitiveness (projects MAT2014-52477-C5-2-P and MAT2015-66888-C3-3R) and Instituto de Sistemas Optoelectrónicos y Microelectrónica (ISOM) facilities. Alicia Prados acknowledge financial support from Spanish Ministry of Education, Culture and Sport (FPU12/04292) and useful discussions on XRD measurements with I. Carabias and A. Migliorini
NO Ministerio de Economía y Competitividad (MINECO)
NO Ministerio de Educación, Cultura y Deporte (MECD)
NO Instituto de Sistemas Optoelectrónicos y Microelectrónica (ISOM)
DS Docta Complutense
RD 5 jul 2025