TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - García, S.
AU  - Castán, E.
AU  - Dueñas, S.
AU  - Fernández, M.
PY  - 1998
DO  - 10.1063/1.366713
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59299
T2  - Journal of Applied Physics
AB  - We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the...
LA  - eng
M2  - 332
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Silicon-Nitride Films
KW  - Level Transient Spectroscopy
KW  - Si-SiO2 Interfaces
KW  - Room-Temperature
KW  - Hydrogen Content
KW  - Plasma
KW  - Oxide
KW  - Dielectrics
KW  - Traps.
TI  - Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
TY  - journal article
VL  - 83
ER  -