TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
PY  - 2009
DO  - 10.1088/0022-3727/42/8/085110
SN  - 0022-3727
UR  - https://hdl.handle.net/20.500.14352/44247
T2  - Journal of Physics D-Applied Physics
AB  - In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated...
LA  - eng
PB  - IOP Publishing LTD
KW  - Solar-Cells
KW  - Silicon
KW  - Efficiency
KW  - Transition
KW  - Alloys
KW  - Films
KW  - ZNO
KW  - GAN.
TI  - Electronic transport properties of Ti-impurity band in Si
TY  - journal article
VL  - 42
ER  -