TY  - JOUR
AU  - Ottaviani, L.
AU  - Yakimov, E.
AU  - Hidalgo Alcalde, Pedro
AU  - Martinuzzi, S.
PY  - 2004
SN  - 0255-5476
UR  - https://hdl.handle.net/20.500.14352/51069
T2  - Silicon Carbide and Related Materials 2003, Prts 1 and 2
AB  - Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by forming bonds with Si atoms. Introduction of H atoms can then improve the electrical performance of Schottky diodes by reducing the metal-SiC interface...
M2  - 509
PB  - Trans Tech Publications Ltd
KW  - Ion-Implantation
KW  - Silicon-Carbide
KW  - Passivation
TI  - Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma
TY  - journal article
VL  - 457-46
ER  -