RT Journal Article
T1 Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
A1 Luna, Esperanza
A1 Guzmán, Álvaro
A1 Trampert, Achim
A1 Álvarez Silvar, Gabriel
AB We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by two-dimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional-grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.
PB American Physical Society
SN 0031-9007
YR 2012
FD 2012-09-18
LK https://hdl.handle.net/20.500.14352/43692
UL https://hdl.handle.net/20.500.14352/43692
LA eng
NO © American Physical Society
DS Docta Complutense
RD 20 abr 2025