RT Journal Article
T1 Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
AB The effect of deposition temperature on the physical properties of SiOxNy films has been studied. The films have ben deposited from mixtures of SiH4, O-2 and N-2, using the electron cyclotron resonance-chemical vapor deposition technique, with substrate temperature ranging from room temperature (50 degrees C) to 200 degrees C. When substrate temperature is increased, a slight decrease in both Si-H and N-H bond concentration is detected. A small shift (10-17 cm(-1)) in the dominant Fourier transform infrared (FTIR) absorption peak (Si-O/Si-N stretching band) seems to be associated with a decrease in the N-H bond concentration. This behavior is attributed to the formation of Si-N bonds at the expense of N-H bonds, with no significant change in the film composition. Full width at half maximum (FWHM) of the dominant FTIR peak decreases as temperature is increased for all the composition range, indicating an improvement in the quality of the films. Silicon oxide films (SiO2.0) deposited at 200 degrees C show improved properties with respect to those deposited at room temperature. FWHM decreases from 95 to 87 cm(-1), and the shoulder-to-peak ratio from 0.29 to 0.22. The position of the Si-O stretching band (1071 cm(-1)) is unaffected. These values are very close to those obtained for thermally grown oxides, while the thermal budget of the process is significantly reduced. (C) 1999 American Vacuum Society. [S0734-2101(99)01704-2].
PB AVS Amer. Inst. Physics
SN 0734-2101
YR 1999
FD 1999-07
LK https://hdl.handle.net/20.500.14352/59268
UL https://hdl.handle.net/20.500.14352/59268
NO International Symposium of the American-Vacuum-Society (45. 1998. Baltimore, Maryland, USA). © American Vacuum Society.
DS Docta Complutense
RD 23 abr 2025