RT Journal Article
T1 Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films
A1 Mártil de la Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro del
AB An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) system. The presence of nitrogen in the films increases the dielectric constant value and degrades the interface quality, as our measurements demonstrate. The effect of thermal annealing has also been determined. Capacitance-voltage (C-V) results show that unannealed samples exhibit positive flat-band voltages, whereas annealed ones exhibit negative values. On the other hand, from deep-level transient spectroscopy (DLTS) measurements we can conclude that interfacial state density diminishes when thermal treatments are applied. Moreover, conductance transient analysis provides the energetic and spatial distribution of defects in the films and demonstrates that thermal improvement affects not only the interface, but also the insulator bulk.
PB Inst. Pure Applied Physics
SN 0021-4922
YR 2003
FD 2003-08-01
LK https://hdl.handle.net/20.500.14352/51129
UL https://hdl.handle.net/20.500.14352/51129
LA eng
NO 1) S. V. Hattangady, H. Niimi and G. Lucovsky: J. Vac. Sci. Technol. A, 14, (1996) 3017.2) J. I. Yeh and S. C. Lee: J. Appl. Phys., 79, (1996) 656.3) P. V. Bulkin, P. L. Swart and B. M. Lacquet: J. Non-Cryst. Solids, 187, (1995) 484.4) T. T. Chau, S. R. Mejia and K. C. Kao: J. Vac. Sci. Technol. B, 10, (1992) 2170.5) P. K. Shufflebotham, D. J. Thomson and H. C. Card: J. Appl. Phys., 64, (1988) 4398.6) A. Popov: J. Vac. Sci. Technol. A, 7, (1989) 894.7) Á. Prado, F. L. Martínez, I. Mártil, G. González-Díaz and M. Fernández: J. Vac. Sci. Technol. A, 17, (1999) 1263.8) Á. Prado, I. Mártil, M. Fernández and G. González-Díaz: Thin Solid Films, 343–344, (1999) 437.9) L. He, H. Hasegawa, T. Sawada and H. Ohno: J. Appl. Phys., 63, (1988) 2120.10) L. He, H. Hasegawa, T. Sawada and H. Ohno: Jpn. J. Appl. Phys., 27, (1988) 512.11) E. H. Nicollian and J. R. Brews: MOS Physics and Technology (John Wiley & Sons, New York, 1982), Chap. 8.12) S. Dueñas, R. Peláez, H. Castán, R. Pinacho, L. Quintanilla, J. Barbolla, I. Mártil and G. González-Díaz: Appl. Phys. Lett., 71, (1997) 826.13) H. Castán, S. Dueñas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil and G. González-Díaz: Microelectron. Reliab., 40, (2000) 845.14) H. Castán, S. Dueñas and J. Barbolla: Jpn. J. Appl. Phys., 41, (2002) L1215.15) T. Sakurai and T. Sugano: J. Appl. Phys., 52, (1981) 2889.
NO © 2003 The Japan Society of Applied Physics. The authors would like to thank C. A. I. de Implantación Iónica from Complutense University in Madrid for technical assistance with the ECR-PECVD system. This research was partially supported by the Spanish DGESIC under grant nos. TIC 1FD97-2085 and TIC 98/0740.
NO Spanish DGESIC
DS Docta Complutense
RD 7 may 2024