TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
PY  - 2003
DO  - 10.1143/JJAP.42.4978
SN  - 0021-4922
UR  - https://hdl.handle.net/20.500.14352/51129
T2  - Japanese Journal of Applied Physics
AB  - An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron...
LA  - eng
M2  - 4978
PB  - Inst. Pure Applied Physics
KW  - C-V Curves
KW  - Silicon Oxynitride
KW  - Quality.
TI  - Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films
TY  - journal article
VL  - 42
ER  -