TY  - JOUR
AU  - Pereira, Daniela R.
AU  - Bouhafs, Chamseddine
AU  - Verheij, Dirkjan
AU  - Díaz-Guerra Viejo, Carlos
AU  - Vázquez, Luis
AU  - Peres, Marco
AU  - Cardoso, Susana
AU  - Freitas, Paulo P.
AU  - Lorenz, Katharina
PY  - 2025
DO  - 10.1002/pssr.202500104
SN  - 1862-6254
UR  - https://hdl.handle.net/20.500.14352/132523
T2  - Physica Status Solidi - Rapid Research Letters
AB  - α-MoO3 field effect transistors (FETs), exhibiting n-type behavior, are fabricated. These devices are based on α-MoO3 exfoliated crystals, which are produced from bulk crystals by mechanical exfoliation and then transferred onto Si/SiO2 substrates,...
LA  - eng
M2  - 2500104-1
PB  - Wiley
KW  - Anticlockwise hysteresis
KW  - Field effect transistors
KW  - Molybdenum oxide
KW  - Thermal annealing
KW  - Two-dimensional materials
TI  - Field effect transistors based on α-MoO3 exfoliated crystals: fabrication, functionalization and characterization
TY  - journal article
ER  -