RT Book, Section
T1 Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures
A1 Mártil de la Plaza, Ignacio
A1 González Díaz, Germán
A1 Dueñas, S.
A1 Peláez, R.
A1 Castán, E.
A1 Barbolla, J.
AB We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.
PB Materials Research Society
SN 1-55899-405-X
YR 1998
FD 1998
LK https://hdl.handle.net/20.500.14352/60862
UL https://hdl.handle.net/20.500.14352/60862
NO Symposium on Electrically Based Microstructural Characterization at the 1997 MRS Fall Meeting (2. 1997. Boston, USA). © Materials Research Society.
DS Docta Complutense
RD 4 may 2024