TY  - CHAP
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Dueñas, S.
AU  - Peláez, R.
AU  - Castán, E.
AU  - Barbolla, J.
PY  - 1998
DO  - 10.1557/PROC-500-87
SN  - 1-55899-405-X
UR  - https://hdl.handle.net/20.500.14352/60862
AB  - We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. The...
M2  - 87
PB  - Materials Research Society
KW  - Engineering
KW  - Electrical-Electronic
KW  - Materials Science
KW  - Multidisciplinary
KW  - Characterization-Testing
KW  - Composites.
TI  - Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures
TY  - book part
VL  - 500
ER  -