RT Journal Article
T1 Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Sánchez Quesada, Francisco
A1 Santamaría Sánchez-Barriga, Jacobo
A1 Iborra, E.
AB All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements.
PB American Institute of Physics
SN 0021-8979
YR 1989
FD 1989-04-15
LK https://hdl.handle.net/20.500.14352/59315
UL https://hdl.handle.net/20.500.14352/59315
LA eng
NO © American Institute of Physics. This work was partially financed by the Spain-USA Joint Committe under Grant No. CCA-8411046.
NO Spain-USA Joint Committe
DS Docta Complutense
RD 31 jul 2025