TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Sánchez Quesada, Francisco
AU  - Santamaría Sánchez-Barriga, Jacobo
AU  - Iborra, E.
PY  - 1989
DO  - 10.1063/1.342676
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59315
T2  - Journal of Applied Physics
AB  - All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed:...
LA  - eng
M2  - 3236
PB  - American Institute of Physics
KW  - Physics
KW  - Applied.
TI  - Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
TY  - journal article
VL  - 65
ER  -