RT Journal Article T1 Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices A1 Nogales Díaz, Emilio A1 Méndez Martín, Bianchi A1 Piqueras de Noriega, Javier A1 García, J. A. AB Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown. PB Iop Publishing Ltd SN 0957-4484 YR 2009 FD 2009-03-18 LK https://hdl.handle.net/20.500.14352/44099 UL https://hdl.handle.net/20.500.14352/44099 LA eng NO [1] Huang Y, Duan X F and Lieber C M 2005 Small 1 142[2] Minot E D, Kelkensberg F, van Kouwen M, van Dam J A, Kouwenhoven L P, Zwiller V, Borgstrom M T, Wunnicke O, Verhiejen M A and Bakker E P A M 2007 Nano Lett. 7 367[3] Law M, Sirbuly D J, Johnson J C, Goldberger J, Saykally R and Yang P D 2004 Science 305 1269[4] Nogales E, Garcíaa J A, Méndez B and Piqueras J 2007 Appl. Phys. Lett. 91 133108[5] Heyden O, Agarwal R and Lieber C M 2006 Nat. Mater. 5 352[6] Tian B, Zheng X L, Kempa T J, Fang Y, Yu N F, Yu G H, Huang J L and Lieber C M 2007 Nature 449 885[7] Lu J C, Chang P and Fan Z 2006 Mater. Sci. Eng. R 52 49[8] Tippins H H 1965 Phys. Rev. A 140 316[9] Yamaga M, Víllora E G, Shimamura K, Ichinose N and Honda M 2003 Phys. Rev. B 68 155207[10] Zhou X T, Heigl F, Ko J Y P, Murphy M W, Zhou J G, Regier T, Blyth R I R and Sham T K 2007 Phys. Rev. B 75 125303[11] Nogales E, Méndez B and Piqueras J 2005 Appl. Phys. Lett. 86 113112[12] Víllora E G, Shimamura K, Ujiie T and Aoki K 2008 Appl. Phys. Lett. 92 202120[13] Binet L and Gourier J 1998 J. Phys. Chem. Solids 59 1241[14] Kenyon A J 2005 Semicond. Sci. Technol. 20 R65[15] Yu D P, Bubendorff J L, Zhou J F, Leprince-Wang Y and Troyon M 2002 Solid State Commun. 124 417[16] Gollakota P, Dhawan A, Wellenius P, Lunardi L M, Muth J F, Saripalli Y N, Peng H Y and Everitt H O 2006 Appl. Phys. Lett. 88 221906[17] Nogales E, García J A, Méndez B and Piqueras J 2007 J. Appl. Phys. 101 033517[18] Nogales E, Méndez B and Piqueras J 2008 Nanotechnology 19 035713[19] Nogales E, García J A, Méndez B, Piqueras J, Lorenz K and Alves E 2008 J. Phys. D: Appl. Phys. 41 065406[20] Dierolf V, Sandman C, Zavada J, Chow P and Hertog B 2004 J. Appl. Phys. 95 5464[21] Currie M J, Mapel J K, Heidel T D, Goffri S and Baldo J A 2008 Science 321 226 NO © 2009 IOP 1 Publishing Ltd.This work has been supported by MEC (Project MAT 2006-01259). NO MEC DS Docta Complutense RD 18 may 2024