RT Journal Article
T1 Static and Dynamic Tests on a 40-nm Commercial SRAM under Muons and Neutrons
A1 Fabero Jiménez, Juan Carlos
A1 Franco Peláez, Francisco Javier
A1 Mecha López, Hortensia
A1 Mohammadreza Rezaei, 
A1 Adrian D. Hillier, 
A1 James S. Lord, 
A1 Stephen P. Cottrell, 
A1 Andrea Colangeli, 
A1 Nicola Fonnesu, 
A1 Guglielmo Pagano, 
A1 Juan antonio Clemente, 
A1 Clemente Barreira, Juan Antonio
AB The single-bit and multiple-cell upset cross sections for positive and negative muons and 14-MeV neutrons of a commercial 40-nm CMOS SRAM have been experimentally determined in static and dynamic modes. In the case of the muons, the momentum with the highest cross section was predicted by EVA, a custom simulation tool, in spite of not having the characteristics of the chemicals used to build the device and the printed circuit boards. Positive muons only cause single-bit upsets, while negative muons and neutrons also induce multiple cell upsets of various multiplicities. The number of multiple events was determined by using LELAPE, a tool that explores the statistical properties of the set of data. In all the tests, the static cross-section was on the same order as the dynamic one, or even higher. Besides, in the case of muons, the cross section is not negligible at standard power supply voltages. These phenomena are attributed to a side effect of the internal circuitry added by the manufacturer to adapt the bias voltage and to minimize the power consumption.
PB IEEE
YR 2026
FD 2026-01
LK https://hdl.handle.net/20.500.14352/130223
UL https://hdl.handle.net/20.500.14352/130223
LA eng
NO Ministerio de Ciencia, Innovación y Universidades
NO Unión Europea, 2020 research and innovation program
DS Docta Complutense
RD 20 ene 2026