TY  - JOUR
AU  - Fabero Jiménez, Juan Carlos
AU  - Franco Peláez, Francisco Javier
AU  - Mecha López, Hortensia
AU  - Mohammadreza Rezaei
AU  - Adrian D. Hillier
AU  - James S. Lord
AU  - Stephen P. Cottrell
AU  - Andrea Colangeli
AU  - Nicola Fonnesu
AU  - Guglielmo Pagano
AU  - Juan antonio Clemente
AU  - Clemente Barreira, Juan Antonio
PY  - 2026
DO  - 10.1109/TNS.2026.3652620
UR  - https://hdl.handle.net/20.500.14352/130223
T2  - IEEE Transactions on Nuclear Science
AB  - The single-bit and multiple-cell upset cross sections for positive and negative muons and 14-MeV neutrons of a commercial 40-nm CMOS SRAM have been experimentally determined in static and dynamic modes. In the case of the muons, the momentum with the...
LA  - eng
PB  - IEEE
KW  - Muons, Multiple Cell Upset (MCU), neutrons, Single Bit Upset (SBU), Single Event Effect (SEE), Single Event Upset (SEU), Static Random Access Memory (SRAM)
TI  - Static and Dynamic Tests on a 40-nm Commercial SRAM under Muons and Neutrons
TY  - journal article
ER  -