RT Journal Article
T1 Luminescence from indented Te-doped GaSb crystals
A1 Chioncel, M. F.
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
AB Cathodoluminescence in the scanning electron microscope has been used to investigate the effect of plastic deformation, produced by indentation, in Te-doped GaSb crystals. Deformation has been found to cause a strong quenching of the luminescence emission as well as spectral changes. In particular, the decrease of the near band edge emission is accompanied by the relative increase of the defect band A and of the 730 meV band related to the VGaGaSbTesb centres. Annealing treatments up to 600 degreesC lead to partial recovery of the deformation induced defects, and reveal the existence of Te out-diffusion processes from the deformed areas.
PB IOP Publishing Ltd
SN 0268-1242
YR 2004
FD 2004-03
LK https://hdl.handle.net/20.500.14352/51148
UL https://hdl.handle.net/20.500.14352/51148
LA eng
NO © 2004 IOP Publishing Ltd Printed in the UK.This work was supported by MCYT through project MAT2000-2119.
NO MCYT
DS Docta Complutense
RD 7 abr 2025