TY  - JOUR
AU  - Chioncel, M. F.
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras de Noriega, Javier
PY  - 2004
DO  - 10.1088/0268-1242/19/3/036
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/51148
T2  - Semiconductor Science and Technology
AB  - Cathodoluminescence in the scanning electron microscope has been used to investigate the effect of plastic deformation, produced by indentation, in Te-doped GaSb crystals. Deformation has been found to cause a strong quenching of the luminescence...
LA  - eng
M2  - 490
PB  - IOP Publishing Ltd
KW  - Liquid-Phase Epitaxy
KW  - Sb-Rich Solutions
KW  - High-Quality Gasb
KW  - N-Type Gasb
KW  - P-Gasb
KW  - Cathodoluminescence
KW  - Photoluminescence
KW  - Dislocations
KW  - Defects
KW  - Centers
TI  - Luminescence from indented Te-doped GaSb crystals
TY  - journal article
VL  - 19
ER  -