TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2004
DO  - 10.1016/j.tsf.2003.12.084
SN  - 0040-6090
UR  - https://hdl.handle.net/20.500.14352/51119
T2  - Thin Solid Films
AB  - The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor deposition...
LA  - eng
M2  - 203
PB  - Elsevier Science SA
KW  - Free-Energy Model
KW  - Si-SiO2 Interfaces
KW  - Alloys
KW  - Si.
TI  - Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
TY  - journal article
VL  - 459
ER  -