TY  - JOUR
AU  - Gonzalo, A.
AU  - Nogales Díaz, Emilio
AU  - Lorenz, K.
AU  - Víllora, E. G.
AU  - Shimamura, K:
AU  - Piqueras de Noriega, Javier
AU  - Méndez Martín, Bianchi
PY  - 2017
DO  - 10.1016/j.jlumin.2017.01.042
SN  - 0022-2313
UR  - https://hdl.handle.net/20.500.14352/18211
T2  - Journal of Luminescence
AB  - The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga₂O₃ nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achieved by...
LA  - eng
M2  - 56
PB  - Elsevier Science BV
KW  - Gallium oxide
KW  - Semiconductor nanowires
KW  - Optical-transitions
KW  - Beta-Ga₂O₃
KW  - Luminescence
KW  - Crystals
KW  - Field
TI  - Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires
TY  - journal article
VL  - 191 A
ER  -