RT Journal Article
T1 Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
A1 Cremades Rodríguez, Ana Isabel
A1 Piqueras De Noriega, Francisco Javier
A1 Remón, A.
A1 García, J. A.
A1 Santos, M. T.
A1 Dieguez, E.
AB Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples.
PB American Institute of Physics
SN 0021-8979
YR 1998
FD 1998-06-15
LK https://hdl.handle.net/20.500.14352/58845
UL https://hdl.handle.net/20.500.14352/58845
LA eng
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NO © 1998 American Institute of Physics.This work has been supported by DGES (Project No. PB 93-1256) and CICYT (Project No. TXT96-1688).
NO DGES
NO CICYT
DS Docta Complutense
RD 28 sept 2024