RT Journal Article
T1 Deep energy levels in CdTe and CdZnTe
A1 Castaldini, A.
A1 Cavallini, A.
A1 Fraboni, B
A1 Fernández Sánchez, Paloma
A1 Piqueras de Noriega, Javier
AB The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed.
PB American Institute of Physics
SN 0021-8979
YR 1998
FD 1998-02-15
LK https://hdl.handle.net/20.500.14352/59151
UL https://hdl.handle.net/20.500.14352/59151
LA eng
NO 1.	H. J. von Bardeleben, V. Mazoyer, X. Launay, and J. C. launay, Semicond. Sci. Technol. 10 163 (1996).2.	J. P. Zielinger, M. Tapiero, Z. Guellil, G. Roosen, P. Delaye, J. C. Launay, and W. Mazoyer, Mater. Sci. Eng. B. 16, 273 (1993).3.	A. J. Strauss, Rev. Phys. Apple.12, 167 (1977).4.	J. W. Allen, Semicond.  Sci.  Technol, 10, 1049 (1995).5.	A. Castaldini, A. Cavallini,  B. Fraboni, P. Fernández, and J. Piqueras, Appl. Phys. Lett. 69, 3507 (1996).6.	……
NO (C) 1998 American Institute of Physics.
NO DGICYT
DS Docta Complutense
RD 30 abr 2024