RT Journal Article
T1 Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
AB The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (SiNxH) thin films by the electron cyclotron resonance method. In this work, we show that interfacial state density can be diminished without degrading electrical insulator properties by fabricating MIS structures based on a bi-layered insulator with different insulator compositions and different thickness. The effect of rapid thermal annealing treatment has been analysed in detail in these samples. An interface state density as low as 3x 10(11) cm(-2) eV(-1) was measured in some structures.
PB Kluwer Academic Publ.
SN 0957-4522
YR 1999
FD 1999-07
LK https://hdl.handle.net/20.500.14352/59266
UL https://hdl.handle.net/20.500.14352/59266
LA eng
NO © Kluwer Academic Publishers.
DS Docta Complutense
RD 25 dic 2025