TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 1999
DO  - 10.1023/A:1008949507676
SN  - 0957-4522
UR  - https://hdl.handle.net/20.500.14352/59266
T2  - Journal of Materials Science: Materials in Electronics
AB  - The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (SiNxH)...
LA  - eng
M2  - 373
PB  - Kluwer Academic Publ.
KW  - Cyclotron-Resonance
KW  - Films
KW  - InP
KW  - Stability
KW  - Devices
KW  - Traps.
TI  - Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
TY  - journal article
VL  - 10
ER  -