RT Journal Article
T1 Scanning tunneling spectroscopy study of erbium doped GaSb crystals
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Plaza, J. L.
A1 Dieguez, E.
AB Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.
PB American Institute of Physics
SN 0021-8979
YR 1999
FD 1999-08-01
LK https://hdl.handle.net/20.500.14352/58942
UL https://hdl.handle.net/20.500.14352/58942
LA eng
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NO © 1999 American Institute of Physics.This work was supported by DGES (Project No. PB96-0639) and by CICYT (Project Nos. ESP95-0148 and ESP98-1340)
NO DGES
NO CICYT
DS Docta Complutense
RD 18 jul 2024