RT Book, Section
T1 The intermediate band approach in the third solar cell generation context
A1 Martil De La Plaza, Ignacio
A1 García Hemme, Eric
A1 García Hernansanz, Rodrigo
A1 González Díaz, Germán
A1 Olea Ariza, Javier
A1 Prado Millán, Álvaro Del
A2 García, Héctor
A2 Castán, Helena
AB Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.
PB IEEE
SN 978-1-4673-4666-5
YR 2013
FD 2013
LK https://hdl.handle.net/20.500.14352/45517
UL https://hdl.handle.net/20.500.14352/45517
LA eng
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NO Spanish Conference on Electron Devices-(CDE) (9.2013.Valladolid, España). Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken.
NO Comunidad de Madrid
NO MICINN
DS Docta Complutense
RD 1 sept 2024